DocumentCode :
329166
Title :
Gallium Doping For Silicon Etch Stop In Koh
Author :
Senna, Jose R. ; Smith, Rosemary L.
Author_Institution :
LAS, Instituto de Pesquisas Espaciais
Volume :
1
fYear :
1995
fDate :
25-29 Jun 1995
Firstpage :
194
Lastpage :
197
Keywords :
Anisotropic magnetoresistance; Boron; Capacitive sensors; Doping; Etching; Gallium; Ion implantation; Lattices; Microstructure; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors and Actuators, 1995 and Eurosensors IX.. Transducers '95. The 8th International Conference on
Print_ISBN :
91-630-3473-5
Type :
conf
DOI :
10.1109/SENSOR.1995.717136
Filename :
717136
Link To Document :
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