Title :
Ultra wide-band, high-power, high-efficiency GaN amplifier
Author :
Ezzeddine, By Amin ; Hung, Alice ; Viveiros, Edward ; Ho-Chung Huang
Author_Institution :
AMCOM Commun., Inc., Gaithersburg, MD, USA
Abstract :
We report a high-performance GaN amplifier operating from 100MHz to 3,000MHz. The best results included 100W output power, 22dB gain with 40% power-added-efficiency from 100MHz to 3,000MHz. This performance is achieved by tailoring both the device impedance and by using unique wide-band circuit matching topology. Detailed design technique of both device and matching circuit will be presented.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; gallium compounds; network topology; power integrated circuits; power semiconductor devices; ultra wideband technology; wide band gap semiconductors; GaN; device impedance; efficiency 40 percent; frequency 100 MHz to 3000 MHz; gain 22 dB; high-performance GaN amplifier; high-power amplifier; power 100 W; power-added-efficiency; ultrawide-band amplifier; wide-band circuit matching topology; Gallium nitride; Impedance; Impedance matching; MMICs; Performance evaluation; Power amplifiers; Power generation; Broadband amplifiers; MMICs; high-voltage techniques; microwave devices; power combiners;
Conference_Titel :
Wireless Symposium (IWS), 2013 IEEE International
Conference_Location :
Beijing
DOI :
10.1109/IEEE-IWS.2013.6616737
