DocumentCode
329167
Title
In Situ Phosphorus-doped Polysilicon For Integrated Mems
Author
Biebl, M. ; Mulhern, G.T. ; Howe, R.T.
Author_Institution
Siemens, Corporate Research & Development
Volume
1
fYear
1995
fDate
25-29 Jun 1995
Firstpage
198
Lastpage
201
Keywords
Capacitive sensors; Conductivity; Fabrication; Micromechanical devices; Optical films; Rapid thermal annealing; Residual stresses; Strain measurement; Temperature; Ultrasonic variables measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors and Actuators, 1995 and Eurosensors IX.. Transducers '95. The 8th International Conference on
Print_ISBN
91-630-3473-5
Type
conf
DOI
10.1109/SENSOR.1995.717138
Filename
717138
Link To Document