DocumentCode :
329167
Title :
In Situ Phosphorus-doped Polysilicon For Integrated Mems
Author :
Biebl, M. ; Mulhern, G.T. ; Howe, R.T.
Author_Institution :
Siemens, Corporate Research & Development
Volume :
1
fYear :
1995
fDate :
25-29 Jun 1995
Firstpage :
198
Lastpage :
201
Keywords :
Capacitive sensors; Conductivity; Fabrication; Micromechanical devices; Optical films; Rapid thermal annealing; Residual stresses; Strain measurement; Temperature; Ultrasonic variables measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors and Actuators, 1995 and Eurosensors IX.. Transducers '95. The 8th International Conference on
Print_ISBN :
91-630-3473-5
Type :
conf
DOI :
10.1109/SENSOR.1995.717138
Filename :
717138
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=329167
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