DocumentCode
3291683
Title
Temperature dependence of capture coefficients in trapping phenomena
Author
Lepadatu, Ana-Maria ; Stavarache, Ionel ; Lazanu, Sorina ; Iancu, Vladimir ; Mitroi, Mihai Razvan ; Nigmatulin, Raoul Rashid ; Ciurea, Magdalena Lidia
Author_Institution
Nat. Inst. of Mater. Phys., Măgurele, Romania
Volume
02
fYear
2010
fDate
11-13 Oct. 2010
Firstpage
371
Lastpage
374
Abstract
The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results.
Keywords
Gaussian distribution; calcium compounds; electron traps; elemental semiconductors; interface states; multilayers; silicon; Gaussian type; Si-CF; carrier thermal velocity; multilayered structures; stress-induced interface traps; temperature dependent capture coefficients; trapping phenomena; Electron traps; Heating; Silicon; Strain; Temperature dependence; Gaussian distribution; Traps; capture coefficients; relaxation currents;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2010 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-5783-0
Type
conf
DOI
10.1109/SMICND.2010.5649094
Filename
5649094
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