Title :
A physical model for planar spiral inductors on silicon
Author :
Yue, C.P. ; Ryu, C. ; Lau, J. ; Lee, T.H. ; Wong, S.S.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
This paper presents a physical model for planar spiral inductors on silicon. The model has been confirmed with measured and published data of inductors having different geometric and process parameters. This model is scalable with inductor geometry, allowing designers to predict and optimize the quality factor.
Keywords :
Q-factor; UHF integrated circuits; equivalent circuits; inductors; integrated circuit design; integrated circuit modelling; silicon; Q-factor optimisation; RF IC design tool; Si; UHF IC; inductor geometry; monolithic inductor; physical model; planar spiral inductors; quality factor prediction; scalable model; Capacitance; Conductors; Frequency; Inductors; Predictive models; Q factor; Silicon; Solid modeling; Spirals; Substrates;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553144
