Title :
Silicon spintronics
Author_Institution :
Dept. of Phys. & Center for Nanophysics & Adv. Mater., Univ. of Maryland, College Park, MD
Abstract :
Recent advances in successful operation of silicon-based devices where transport is dependent on electron magnetic moment, or ldquospinrdquo, could provide a path to a future alternative for logic processing. The basics of this spin-based electronics technology are discussed and the specific methods necessary for application to silicon are described. Mirroring the Haynes-Shockley experiment, which was used sixty years ago to measure minority-carrier transport parameters in semiconductors, here we have used a four-terminal device to make fundamental measurements of spin transport parameters.
Keywords :
elemental semiconductors; magnetic moments; magnetoelectronics; semiconductor devices; silicon; spin polarised transport; Haynes-Shockley experiment; Si; electron magnetic moment; four-terminal device; minority-carrier transport parameters; semiconductors; silicon-based devices; spin-based electronics; spintronics; Detectors; Electrons; Magnetic materials; Magnetic moments; Magnetization; Magnetoelectronics; Physics; Schottky barriers; Silicon; Wafer bonding;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897526