Pockets engineering impact on mismatch performance on 45nm MOSFET technologies

Pocket architecture is a useful technique to eliminate short channel effects. However, it has been shown an influence on mismatch performances. In this paper, different implant trials are done on NMOS devices with dose and energy variation. For the first time, the impact of indium implant will be analyzed to optimize mismatch performance. It is demonstrated that this implant decreases significantly the mismatch. Moreover, it diminishes the variability not only at small gate lengths but also at large ones.