DocumentCode :
3291994
Title :
The design of 14GHz temperature-compensated 20Watt power amplifier module
Author :
Liao, Chien-Hsiung ; Tang, Chun-Man ; Chen, Kuan-Lung ; Niu, Dow-Chih ; Hu, Robert
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2011
fDate :
15-17 April 2011
Firstpage :
2740
Lastpage :
2742
Abstract :
We report on the design of a temperature compensated power amplifier module which can generate 20 Watt output power with 34 dB gain at 14 GHz. This module is made of one commercial microwave monolithic integrated circuit and three discrete power transistors. Allowing gate biases of these power transistors to be automatically adjusted with ambient temperature, output power of the module can now be more steadily reaching stabilization. Details regarding the microwave power amplifier and the DC biasing circuit will be presented in this paper.
Keywords :
MMIC power amplifiers; compensation; microwave power transistors; modules; DC biasing circuit; ambient temperature; discrete power transistors; frequency 14 GHz; gain 34 dB; microwave monolithic integrated circuit; microwave power amplifier; power 20 W; temperature-compensated power amplifier module; Logic gates; Microwave amplifiers; Microwave circuits; Power amplifiers; Power generation; Power measurement; Temperature measurement; Temperature compensation; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-8036-4
Type :
conf
DOI :
10.1109/ICEICE.2011.5778249
Filename :
5778249
Link To Document :
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