A Low-Voltage Sense Amplifier for Embedded Flash Memories

Author

Hua Zhang ; Ling Lu

Author_Institution

Inf. Eng. Dept., Eng. Univ. of the Chinese People´s Armed Police Force, Xian, China

Volume

62

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

236

Lastpage

240

Abstract

This brief presents a novel sense amplifier with an enhanced current sensing method for embedded flash memories, capable of operating at a voltage as low as 1.2 V. A dynamic bit-line clamping circuit and a novel reference voltage generation circuit are also employed to improve the precharge speed and sensing window under low power supply voltage. The sense amplifier was implemented in a flash realized with a 0.13-μm flash technology. Experimental results show a read access time of 32 ns with a power supply voltage of 1.2 V and slow corner at 125 °C.

Keywords

flash memories; low-power electronics; reference circuits; dynamic bit-line clamping circuit; embedded flash memories; low power supply voltage; low-voltage sense amplifier; precharge speed; reference voltage generation circuit; sensing window; size 0.13 mum; temperature 125 degC; time 32 ns; voltage 1.2 V; Clamps; Flash memories; Mirrors; Power supplies; Sensors; Threshold voltage; Transistors; Current sensing; embedded flash memories; low voltage; sense amplifier;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2014.2368259

Filename

6949685