Accurate effective mobility extraction in SOI MOS transistors

Author

Thomas, S.M. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R. ; Lander, R.J.P. ; Vellianitis, G. ; Watling, J.R.

Author_Institution

Dept. of Phys., Univ. of Warwick, Coventry

fYear

2009

fDate

18-20 March 2009

Firstpage

31

Lastpage

34

Abstract

Accurate effective mobility calculations of MOSFETs are necessary when assessing the importance of various performance limiting carrier scattering mechanisms. A novel and simple to use technique to correct for the absence of drain bias during the split CV measurement is presented. Its effectiveness is demonstrated by application to a quasi planar SOI MOSFET at 300 K and 4 K. The lateral field and diffusion corrections, which are commonly neglected, are considered and it is shown that they cancel.

Keywords

MOSFET; carrier mobility; semiconductor device measurement; silicon-on-insulator; MOSFET; SOI MOS transistor; Si-SiO₂; carrier scattering mechanism; diffusion correction; drain bias; effective mobility extraction; lateral field; split CV measurement; temperature 300 K; temperature 4 K; Capacitance measurement; Charge measurement; Current measurement; FinFETs; High-K gate dielectrics; Lead compounds; MOSFETs; Physics; Scattering; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897532

Filename

4897532