Title :
Multifinger effect in a GaAs FET distributed large signal CAD model
Author :
Avitabile, G. ; Cidronali, A. ; Vannini, G. ; Manes, G.
Author_Institution :
Dept. of Electr. Eng., Florence Univ., Italy
Abstract :
The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non-linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD tool and it has been tested by comparison with large signal measurements.
Keywords :
CAD; III-V semiconductors; Schottky gate field effect transistors; electromagnetic field theory; electronic engineering computing; equivalent circuits; gallium arsenide; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; GEC-Marconi F20 process; GaAs; GaAs FET; commercial CAD tool; device electrical performance; distributed large signal CAD model; electromagnetic field theory; gate widths; geometrical parameters; material parameters; microwave FETs; millimetre-wave FETs; multifinger effect; nonlinear model; process parameters; scalable model; semiconductor physics; Electromagnetic field theory; Electromagnetic modeling; Gallium arsenide; MESFETs; Microwave FETs; Microwave devices; Microwave theory and techniques; Physics; Semiconductor materials; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553145
