Title :
Electrical characteristics of metal silicide field emitters
Author :
Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Vong Koo
Author_Institution :
Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
To improve silicon field emitter, Ti and Co silicides were formed on silicon tips. Silicides were produced by deposition of metal (Ti and Co) and subsequent annealing. I-V characteristics of as-grown silicon tips and silicide emitters were investigated. Turn-on voltage and emission current of silicon tips were 220 V and 10-8 A, respectively. Ti and Co silicide lowered turn-on voltage significantly. The emission current of Ti and Co silicide emitters were 140 V and 180 V, respectively. Both silicides increased emission current to order of 10-7 A. Ti and Co silicide emitters have enhanced field emission of silicon tips due to large emitting area and lower work function, respectively
Keywords :
annealing; cobalt compounds; electron field emission; titanium compounds; work function; 140 to 220 V; 1E-8 to 1E-7 A; CoSi2; TiSi2; annealing; area; electrical characteristics; emission current; metal deposition; metal silicide field emitter; silicon tip; turn-on voltage; work function; Annealing; Conducting materials; Electric variables; Fabrication; Heat treatment; Materials testing; Silicides; Silicon; Thermal conductivity; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601803
