DocumentCode :
3292130
Title :
Influence of surface treatment of CdZnTe for the radiation detector
Author :
Park, Se Hwan ; Kim, Yong Kyun ; Kim, Han Soo
Author_Institution :
Korea Adv. Energy Res. Inst., Daejeon, South Korea
Volume :
3
fYear :
2005
fDate :
23-29 Oct. 2005
Firstpage :
1399
Lastpage :
1401
Abstract :
CdZnTe is the most promising material for the room temperature radiation detector. Previously many studies have been done for the fabrication process of CdZnTe radiation detector. Usually the CdZnTe surface was mechanically polished and etched with bromine/methanol. The Au or Pt was deposited to make the metal contact on the crystal. From the previous works, it was concluded that the dark current of the CdZnTe detector is greatly influenced by the surface roughness. We study the fabrication process of CdZnTe detector with indium electrode contacts. The dependency of the dark current on the surface treatment was studied. The CdZnTe crystal is treated thermally during the electrode deposition, and the effect of the thermal treatment to the detector performance is studied.
Keywords :
II-VI semiconductors; cadmium compounds; chemical mechanical polishing; dark conductivity; etching; heat treatment; semiconductor counters; surface roughness; wide band gap semiconductors; zinc compounds; CdZnTe radiation detector; CdZnTe surface treatment; dark current; electrode deposition; indium electrode contacts; room temperature radiation detector; surface roughness; thermal treatment; Crystalline materials; Dark current; Electrodes; Etching; Fabrication; Radiation detectors; Rough surfaces; Surface roughness; Surface treatment; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2005 IEEE
ISSN :
1095-7863
Print_ISBN :
0-7803-9221-3
Type :
conf
DOI :
10.1109/NSSMIC.2005.1596581
Filename :
1596581
Link To Document :
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