Impact ionization rates for strained SiGe

Author

Dinh, Thanh Viet ; Jungemann, Christoph

Author_Institution

Inst. fur Mikroelektron. und Schaltungstechnik, Univ. der Bundeswehr Munchen, Munich

fYear

2009

fDate

18-20 March 2009

Firstpage

77

Lastpage

80

Abstract

With Fermi´s golden rule we have calculated the impact ionization (II) rates for strained SiGe. In our approach, the energy and the momentum are exactly conserved during the calculation of the six-dimensional integral in k-space over 4 conduction and 3 valence bands. The wave-vector space is discretized with a very fine grid with a spacing of up to 1/40 (2pi/a), where a is the lattice constant. II coefficient and quantum yield for relaxed Si and strained SiGe are calculated through Full-Band Monte Carlo simulations. Good agreement between simulation and experimental data for relaxed Si is achieved.

Keywords

Ge-Si alloys; Monte Carlo methods; conduction bands; heterojunction bipolar transistors; impact ionisation; lattice constants; valence bands; Fermi golden rule; SiGe; conduction band; discrete wave-vector space; full-band Monte Carlo simulations; impact ionization rates; k-space; lattice constant; quantum yield; six-dimensional integral; valence band; Anisotropic magnetoresistance; Bipolar transistors; Cutoff frequency; Doping; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Impact ionization; Lattices; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897543

Filename

4897543