Distortion analysis of GaAs MESFETs based on physical model using PISCES-HB

Author

Sato-Iwanaga, J. ; Fujimoto, K. ; Masato, H. ; Ota, Y. ; Inoue, K. ; Troyanovsky, B. ; Yu, Z. ; Dutton, R.W.

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

163

Lastpage

166

Abstract

Distortion simulations of GaAs MESFETs based on a physical model and applying the harmonic balance method have been demonstrated. Simulation of circuit configurations with components such as blocking capacitors and RF chokes feeding 50 ohm terminations was performed. Good agreement has been obtained between simulation and measurements for harmonic distortion and two-tone intermodulation distortion characteristics.

Keywords

III-V semiconductors; Schottky gate field effect transistors; digital simulation; electronic engineering computing; gallium arsenide; harmonic distortion; intermodulation distortion; semiconductor device models; GaAs; GaAs MESFETs; PISCES-HB; distortion analysis; harmonic balance method; harmonic distortion; intermodulation distortion characteristics; physical model; two-tone IMD characteristics; Capacitors; Circuit simulation; Feedback circuits; Frequency domain analysis; Gallium arsenide; Harmonic distortion; Inductors; MESFET circuits; MESFET integrated circuits; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553146

Filename

553146