Author :
Heyns, Marc ; Adelmann, Christoph ; Brammertz, Guy ; Brunco, David ; Caymax, Matty ; De Jaeger, Brice ; Delabie, Annelies ; Eneman, Geert ; Houssa, Michel ; Lin, Dennis ; Martens, Koen ; Merckling, Clement ; Meuris, Marc ; Mittard, Jerome ; Penaud, Julien
Abstract :
The use of Ge and III/V materials for future CMOS applications is investigated. Good passivation of the Ge surface can be obtained by either GeO2 or Si passivation. Short channel Ge pMOS devices with low EOT are fabricated using Si passivation at 350 and 500degC. The passivation of III/V materials is a very challenging topic. Some critical issues and passivation schemes are discussed.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; passivation; semiconductor devices; Ge devices; Ge surface passivation; GeO2; III/V devices; Si; advanced CMOS applications; short channel Ge pMOS devices; temperature 350 degC; temperature 500 degC; CMOS technology; Dielectric materials; Hafnium oxide; Indium gallium arsenide; Inorganic materials; MOS devices; Passivation; Physics; Substrates; Temperature;
