Ge and III/V devices for advanced CMOS

Author

Heyns, Marc ; Adelmann, Christoph ; Brammertz, Guy ; Brunco, David ; Caymax, Matty ; De Jaeger, Brice ; Delabie, Annelies ; Eneman, Geert ; Houssa, Michel ; Lin, Dennis ; Martens, Koen ; Merckling, Clement ; Meuris, Marc ; Mittard, Jerome ; Penaud, Julien

Author_Institution

IMEC, Leuven

fYear

2009

fDate

18-20 March 2009

Firstpage

83

Lastpage

86

Abstract

The use of Ge and III/V materials for future CMOS applications is investigated. Good passivation of the Ge surface can be obtained by either GeO₂ or Si passivation. Short channel Ge pMOS devices with low EOT are fabricated using Si passivation at 350 and 500degC. The passivation of III/V materials is a very challenging topic. Some critical issues and passivation schemes are discussed.

Keywords

CMOS integrated circuits; III-V semiconductors; elemental semiconductors; passivation; semiconductor devices; Ge devices; Ge surface passivation; GeO₂; III/V devices; Si; advanced CMOS applications; short channel Ge pMOS devices; temperature 350 degC; temperature 500 degC; CMOS technology; Dielectric materials; Hafnium oxide; Indium gallium arsenide; Inorganic materials; MOS devices; Passivation; Physics; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897544

Filename

4897544