DocumentCode
3292277
Title
THz plasmonic absorption in periodically patterned semiconductor ribbons
Author
Haojun Zhang ; Mingda Zhu ; Sensale-Rodriguez, Berardi ; Xing, Huili Grace
Author_Institution
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
fYear
2013
fDate
14-18 April 2013
Firstpage
1
Lastpage
3
Abstract
In this work we provide a new outlook on plasmonic effects in periodically patterned semiconductor ribbons. Based on the classical electromagnetic theory we develop an analytical model to represent these effects and show that: 1. THz plasmons can be excited at room temperature in periodically patterned semiconductor 2DEGs (regardless of the semiconductor material); 2. its strength and frequency dependence heavily depends in the surrounding dielectric environment. Moreover, we discuss how the plasmon resonance frequency and extinction magnitude can be effectively tuned by controlling the electron concentration and pattern size, which shows great potential for THz signal modulation.
Keywords
electrical conductivity; electron density; electron relaxation time; permittivity; plasmonics; semiconductor materials; terahertz wave spectra; two-dimensional electron gas; 2DEG DC conductivity; THz plasmonic absorption; THz signal modulation; classical electromagnetic theory; dielectric environment; electron concentration; electron relaxation time; extinction magnitude; geometric dimensions; pattern size; periodically patterned semiconductor ribbons; plasmon resonance frequency; plasmonic effects; substrate dielectric constant; temperature 293 K to 298 K; Conductivity; Dielectrics; Finite element analysis; HEMTs; MODFETs; Plasmons; Resonant frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Symposium (IWS), 2013 IEEE International
Conference_Location
Beijing
Type
conf
DOI
10.1109/IEEE-IWS.2013.6616770
Filename
6616770
Link To Document