• DocumentCode
    3292277
  • Title

    THz plasmonic absorption in periodically patterned semiconductor ribbons

  • Author

    Haojun Zhang ; Mingda Zhu ; Sensale-Rodriguez, Berardi ; Xing, Huili Grace

  • Author_Institution
    Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work we provide a new outlook on plasmonic effects in periodically patterned semiconductor ribbons. Based on the classical electromagnetic theory we develop an analytical model to represent these effects and show that: 1. THz plasmons can be excited at room temperature in periodically patterned semiconductor 2DEGs (regardless of the semiconductor material); 2. its strength and frequency dependence heavily depends in the surrounding dielectric environment. Moreover, we discuss how the plasmon resonance frequency and extinction magnitude can be effectively tuned by controlling the electron concentration and pattern size, which shows great potential for THz signal modulation.
  • Keywords
    electrical conductivity; electron density; electron relaxation time; permittivity; plasmonics; semiconductor materials; terahertz wave spectra; two-dimensional electron gas; 2DEG DC conductivity; THz plasmonic absorption; THz signal modulation; classical electromagnetic theory; dielectric environment; electron concentration; electron relaxation time; extinction magnitude; geometric dimensions; pattern size; periodically patterned semiconductor ribbons; plasmon resonance frequency; plasmonic effects; substrate dielectric constant; temperature 293 K to 298 K; Conductivity; Dielectrics; Finite element analysis; HEMTs; MODFETs; Plasmons; Resonant frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Symposium (IWS), 2013 IEEE International
  • Conference_Location
    Beijing
  • Type

    conf

  • DOI
    10.1109/IEEE-IWS.2013.6616770
  • Filename
    6616770