Spectroscopic detection of (i) intrinsic band edge defects, and (ii) transition metal (TM) and rare earth lanthanide (REL) atom occupied states in elemental and complex oxides: A novel pathway to (i) device reliability and (ii) increased functionality in

Author

Lucovsky, Gerald ; Seo, Hyungtak ; Chung, Kwun-Bum ; Kim, Jinwu

Author_Institution

Dept. of Phys., North Carolina State Univ., Raleigh, NC

fYear

2009

fDate

18-20 March 2009

Firstpage

95

Lastpage

98

Abstract

A novel application of synchrotron soft-X-ray spectroscopy is applied to (i) the detection of intrinsic bonding defects, and (ii) partially occupied TM and REL atom valence band edge d-and d- and f-states. Spectroscopic identification and correlation with electrical performance is crucial for the identification and optimization of TM/REL elemental and complex oxides for advanced ULSI devices.

Keywords

CMOS integrated circuits; ULSI; X-ray spectroscopy; optimisation; rare earth compounds; semiconductor device reliability; synchrotrons; ULSI CMOS; complex oxides; device reliability; elemental oxides; intrinsic band edge defects; intrinsic bonding defects; optimization; rare earth lanthanide atom; spectroscopic detection; synchrotron soft-X-ray spectroscopy; transition metal; valence band edge; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897547

Filename

4897547