Submillimeter diode on single barrier nanostructure

Author

Goncharuk, N.M.

Author_Institution

Res. Inst. Orion, Kiev, Ukraine

fYear

2013

fDate

14-18 April 2013

Firstpage

1

Lastpage

4

Abstract

Microwave diode on AlGaAs/GaAs single barrier nanostructure with electron tunnel injection through AlGaAs potential barrier and electron drift in GaAs transit layer is investigated in the framework of small-signal theory taking into account diode parasitic resistance. We consider both transit and injection time of electron since they are comparable and determine operating frequency of the diode. Calculated values of maximal negative conductance are near 200mS and 30mS for the diodes with operating frequencies 270GHz to 880GHz, respectively.

Keywords

BARITT diodes; III-V semiconductors; aluminium compounds; electric admittance; electric resistance; gallium arsenide; millimetre wave diodes; submillimetre wave diodes; AlGaAs potential barrier; AlGaAs-GaAs; diode parasitic resistance; electron drift; electron tunnel injection; frequency 270 GHz to 880 GHz; maximal negative conductance; microwave diode; single barrier nanostructure; small-signal theory; submillimeter Diode; Delays; Electric fields; Electric potential; Gallium arsenide; Impedance; Semiconductor diodes; Time-frequency analysis; Gallium arsenide; diode simulation; microwave impedance; nanostructure; negative conductance; potential barrier; tunnel-injection and transit delays;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2013 IEEE International

Conference_Location

Beijing

Type

conf

DOI

10.1109/IEEE-IWS.2013.6616772

Filename

6616772