Performance enhancement of uniaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOI

Author

Feste, S.F. ; Knoch, J. ; Habicht, S. ; Buca, D. ; Zhao, Q.T. ; Mantl, S.

Author_Institution

Inst. of Bio & Nanosystems (IBN1), Forschungszentrum Julich, Julich

fYear

2009

fDate

18-20 March 2009

Firstpage

109

Lastpage

112

Abstract

We present experimental results on mobility enhancement and on-current gain in Si NW-FETs fabricated on SOI and biaxially strained SOI. In SSOI long channel devices a 2.3 times larger mobility and similar on-current improvement compared to SOI are measured. Measurements on SSOI NW-FETs with different length to width ratio highlight that mobility enhancement due to lateral strain relaxation sensitively depends on the device geometry due to the size dependence of lateral strain relaxation. For maximum performance enhancement due to lateral strain relaxation SSOI devices must have a large length to width ratio. Furthermore, the geometry dependence of lateral strain relaxation to achieve uniaxial tensile strain is investigated with finite element simulations.

Keywords

elemental semiconductors; field effect transistors; finite element analysis; semiconductor devices; silicon; silicon-on-insulator; NW-nFET; SSOI long channel devices; Si; finite element simulations; geometry dependence; lateral strain relaxation; mobility enhancement; semiconductor device fabrication; uniaxially-tensile strained silicon; Capacitive sensors; Conductivity; Geometry; MOSFETs; Nanoscale devices; Oxidation; Silicon; Strain measurement; Tensile strain; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897550

Filename

4897550