Title :
Basic insight about the strain engineering of n-type FinFETs
Author :
Serra, N. ; Esseni, D.
Author_Institution :
DIEGM-IU.NET, Univ. of Udine, Udine
Abstract :
This paper presents both analytical models and numerical simulations concerning strain engineering in n-FinFETs. Our analysis identifies the mechanisms for the stress induced mobility enhancement and provides insight for the stress optimization.
Keywords :
MOSFET; electron mobility; semiconductor device models; mobility enhancement; n-type FinFET; numerical simulation; strain engineering; stress optimization; Analytical models; Capacitive sensors; Carbon capture and storage; Distributed control; Effective mass; Equations; FinFETs; Numerical simulation; Silicon; Stress;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897551
