Comparison of advanced transport models for nanoscale nMOSFETs

Author

Palestri, P. ; Alexander, C. ; Asenov, A. ; Baccarani, G. ; Bournel, A. ; Braccioli, M. ; Cheng, B. ; Dollfus, P. ; Esposito, A. ; Esseni, D. ; Ghetti, A. ; Fiegna, C. ; Fiori, G. ; Aubry-Fortuna, V. ; Iannaccone, G. ; Martinez, A. ; Majkusiak, B. ; Monfr

Author_Institution

DIEGM, Univ. of Udine, Udine

fYear

2009

fDate

18-20 March 2009

Firstpage

125

Lastpage

128

Abstract

In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22 nm Double-Gate and 32 nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.

Keywords

Boltzmann equation; MOSFET; Monte Carlo methods; semiconductor device models; Boltzmann transport equation; FDSOI transistors; Monte-Carlo methods; advanced transport models; double-gate transistors; drift-diffusion; nanoscale nMOSFET; size 22 nm; size 32 nm; Boltzmann equation; Doping profiles; Hafnium oxide; High K dielectric materials; Intrusion detection; MOSFETs; Microelectronics; Quantization; Semiconductor process modeling; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897554

Filename

4897554