Title :
Multilevel flash cells and their trade-offs
Author :
Eitan, B. ; Kazerounian, R. ; Roy, A. ; Crisenza, G. ; Cappelletti, P. ; Modelli, A.
Author_Institution :
WSI Inc., Fremont, CA, USA
Abstract :
In this paper we compare six different multilevel flash cells, viz., common ground, DINOR, AND, AMG, split gate and NAND. The key conclusions are that the hot electron effect lends itself better than tunneling as the multilevel programming mechanism. The common ground cell is the most suitable for multilevel flash cells. The NAND architecture is the least favorable.
Keywords :
EPROM; NAND circuits; hot carriers; integrated memory circuits; tunnelling; AMG cell; AND architecture; DINOR cell; NAND architecture; common ground cell; hot electron effect; multilevel flash cells; multilevel programming mechanism; split gate cell; tunneling; Channel hot electron injection; Circuits; Complexity theory; Costs; Low voltage; Maintenance; Parallel programming; Threshold voltage; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553147
