First HACT analog memory devices demonstrated

Author

Cullen, D.E. ; Miller, M.J.

Author_Institution

United Technologies Res. Center, East Hartford, CT, USA

fYear

1991

fDate

8-11 Dec 1991

Firstpage

167

Abstract

A new analog memory (AM) has been demonstrated using heterojunction acoustic charge transport (HACT) technology. The initial HACT AMs had storage time capabilities in excess of 100 μs. The Schottky electrode storage array had 36 memory cells, each cell holding two charge packets, giving a maximum signal frequency of half the Nyquist frequency, or 36 MHz. Hold voltages in the 5-8-V range were found to be adequate, and effective storage was obtained at the same DC transport current level that resulted in the best charge transport efficiency. Storage times in the millisecond range are possible with cooling to 0°C

Keywords

acoustic charge transport devices; analogue storage; 0 degC; 36 MHz; 5 to 8 V; DC transport current level; HACT analog memory devices; Nyquist frequency; Schottky electrode storage array; charge packets; charge transport efficiency; heterojunction acoustic charge transport; hold voltages; maximum signal frequency; memory cells; storage time capabilities; Acoustic devices; Acoustic testing; Analog memory; Delay lines; Electrodes; Frequency; Heterojunctions; Surface acoustic waves; Temperature; Transducers;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1991. Proceedings., IEEE 1991

Conference_Location

Orlando, FL

Type

conf

DOI

10.1109/ULTSYM.1991.234148

Filename

234148