• DocumentCode
    3292610
  • Title

    Bandwidth extension of GaN Doherty power amplifier: Effect on power, efficiency and linearity

  • Author

    Camarchia, Vittorio ; Fang, Jianwu ; Ghione, G. ; Javan Khoshkholgh, A. ; Moreno Rubio, J. ; Pirola, Marco ; Quaglia, R. ; Ramella, C.

  • Author_Institution
    Dipt. di Elettron. e Telecomun., Politec. di Torino, Turin, Italy
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The paper discusses the bandwidth extension of a second-harmonic tuned GaN Doherty power amplifier: the adopted strategy relies on output wideband compensation stages and input broadband matching. The single-band (3.5 GHz) and the wide-band (3-3.6 GHz) power amplifiers are compared in terms of building blocks design strategy. The performances, experimentally characterized in single- and two-tone conditions, are close to the state-of-the art for these applications, and confirm the validity of the bandwidth extension approach. In fact, output power of more than 43dBm and 6dB back-off efficiency of around 40% are maintained by the bandwidth extension strategy, as well as intermodulation ratio values. Furthermore, digital baseband predistortion is successfully applied to both stages.
  • Keywords
    III-V semiconductors; circuit tuning; gallium compounds; microwave power amplifiers; wide band gap semiconductors; GaN; bandwidth extension; efficiency effect; frequency 3 GHz to 3.6 GHz; linearity effect; power effect; second-harmonic tuned GaN Doherty power amplifier; single-band power amplifiers; wide-band power amplifiers; Baseband; Gallium nitride; Power generation; Predistortion; WiMAX; Wideband; Doherty power amplifier; digital predistortion; gallium nitride; wideband matching networks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Symposium (IWS), 2013 IEEE International
  • Conference_Location
    Beijing
  • Type

    conf

  • DOI
    10.1109/IEEE-IWS.2013.6616789
  • Filename
    6616789