Field emission from aluminum nitride and cubic boron nitride coatings

Author

Wojak, G.J. ; Choi, W.B. ; Myers, A.F. ; Cuomo, J.J. ; Hren, J.J.

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1996

fDate

7-12 Jul 1996

Firstpage

217

Lastpage

220

Abstract

Recent studies have shown that thin layers of wide band gap materials such as silicon carbide and diamond can improve electron emission from of sharp field emitters. Aluminum and boron nitrides possess characteristics similar to those of diamond, e.g. chemical and mechanical stability, a wide band gap (from 6-7 eV), a reported negative electron affinity, and the ability to be doped p-type. There is also the possibility of n-type doping. In this study we investigate the field emission properties of these III-V nitrides deposited onto silicon and molybdenum by both reactive magnetron sputtering and by dielectrophoresis. Emission properties for diamond, AlN, and c-BN are compared and are projected to other wide band gap materials

Keywords

III-V semiconductors; aluminium compounds; boron compounds; electron field emission; electrophoretic coatings; semiconductor thin films; sputtered coatings; wide band gap semiconductors; AlN; BN; III-V nitride; aluminum nitride; chemical stability; coating; cubic boron nitride; dielectrophoresis; doping; electron emission; field emission; mechanical stability; negative electron affinity; reactive magnetron sputtering; wide band gap material; Aluminum nitride; Boron; Chemicals; Doping; Electron emission; III-V semiconductor materials; Magnetic properties; Silicon carbide; Stability; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601811

Filename

601811