DocumentCode
3292679
Title
Fabrication and characterization of DLC-coated field emitter array
Author
Ko, Chang Gi ; Ju, Byeong Kwon ; Lee, Yun Hi ; Park, Jung Ho ; Oh, Myung Hwan
Author_Institution
Div. of Electron. & Inf. Technol., Korea Inst. of Sci. & Technol., Seoul, South Korea
fYear
1996
fDate
7-12 Jul 1996
Firstpage
226
Lastpage
230
Abstract
We fabricated diamond-like-carbon (DLC) coated knife edge field emitter array (KEFEA) on the (110) oriented silicon wafer. The fabricated KEFEA have above six hundreds times of aspect ratio. Then we coated the KEFEA with 300 Å thick DLC film by PECVD method. And we measured the emission current from the KEFEA under vacuum pressure of around 2×10-7 torr. The threshold voltage of the DLC-coated KEFEA lowered about 200 V compared with the bare Si KEFEA. By coating the DLC film, its emission stability was dramatically improved. A simulation on the emitter has been performed by using MAXWELL software
Keywords
CVD coatings; carbon; electron field emission; vacuum microelectronics; (110) oriented silicon wafer; DLC film; KEFEA; MAXWELL software; PECVD coating; Si-C; aspect ratio; diamond-like carbon; fabrication; knife edge field emitter array; simulation; threshold voltage; Crystallization; Etching; Fabrication; Field emitter arrays; Optical films; Semiconductor films; Silicon; Software performance; Thermal conductivity; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location
St. Petersburg
Print_ISBN
0-7803-3594-5
Type
conf
DOI
10.1109/IVMC.1996.601813
Filename
601813
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