Title :
Impact of sputter deposited TaN and TiN metal gates on ZrO2/Ge and ZrO2/Si high-k dielectric gate stacks
Author :
Henkel, C. ; Abermann, S. ; Bethge, O. ; Klang, P. ; Bertagnolli, E.
Author_Institution :
Inst. for Solid State Electron., Vienna Univ. of Technol., Vienna
Abstract :
We investigated the impact of rf-magnetron sputter deposited TaN and TiN gate electrodes on high-k metal gate stacks to be applied in future CMOS technology. As substrate materials germanium and silicon were studied. The effective work function for TiN and TaN films on ZrO2//Si was determined to be 4.6 eV in case of TaN, and 4.5 eV in case of TiN. Thermal stability of the final gate stacks was given upon annealing to temperatures of 500degC.
Keywords :
CMOS integrated circuits; MIS structures; germanium; semiconductor device metallisation; silicon; sputtered coatings; tantalum compounds; titanium compounds; work function; zirconium compounds; CMOS technology; RF-magnetron sputter deposition; TaN; TiN; ZrO2-Ge; ZrO2-Si; electron volt energy 4.5 eV; electron volt energy 4.6 eV; high-k dielectric gate stacks; sputter deposited metal gate; temperature 500 C; work function; Annealing; CMOS technology; Electrodes; Germanium; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Silicon; Thermal stability; Tin; TaN; TiN; ZrO2; effective work function; germanium; high-k; metal-gate; silicon; tantalum-nitride; titanium-nitride; zirconium-oxide;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897570
