Title :
The effect of channel hot carrier stressing on gate oxide integrity in MOSFET
Author :
Chen, I.C. ; Choi, J.Y. ; Chan, T.Y. ; Ong, T.C. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The correlation between channel hot carrier stressing and gate oxide integrity is studied. It is found that channel hot carriers have no detectable effect on gate oxide integrity even when other parameters (e.g., ΔVT and ΔVID) have become intolerably degraded. In the extreme cases of stressing at VG≈VT with measurable hole injection current, however, the oxide charge-to-breakdown decreases linearly with the amount of hole fluence injected during the channel hot hole stressing. This may limit the endurance of a nonvolatile memory using hot holes for erasing. This can also explain the gate-to-drain breakdown of a device biased in the snap-back region, since snap-back at low gate voltage is favorable for hole injection. Snap-back-induced oxide breakdown could be an electrostatic-discharge failure mechanism
Keywords :
failure analysis; hot carriers; insulated gate field effect transistors; semiconductor device testing; MOSFET; channel hot carrier stressing; electrostatic-discharge failure mechanism; gate oxide integrity; gate-to-drain breakdown; hole injection current; hot hole stressing; nonvolatile memory; oxide charge-to-breakdown; snap-back region; Breakdown voltage; Current measurement; Degradation; Electric breakdown; Electron traps; Electrostatic discharge; Failure analysis; Hot carriers; Low voltage; MOSFET circuits; Nonvolatile memory; Stress measurement;
Conference_Titel :
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location :
Monterey, CA
DOI :
10.1109/RELPHY.1988.23416
