Initial stages of Eu and Yb silicides films growth on Si(111) surfaces

Author

Krachino, T.V. ; Kuz´min, M.V. ; Loginov, M.V. ; Mittsev, M.A.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1996

fDate

7-12 Jul 1996

Firstpage

250

Lastpage

251

Abstract

The initial stages of Yb and Eu silicides films growth on the Si(111) surface have been investigated. Their growth is shown to occur in accordance with the mechanism similar to Stranski-Krastanov mode. The growth of 3D silicides begins at elevated substrate temperature after the formation of monatomic thickness adsorbed layer is completed. The growing adsorbed layer, in the Yb case, reveals the domain structure. The desorption activation energies and surface silicides decomposition energies have been measured. The temperature limits of Eu and Yb silicides thermal stability has been found

Keywords

adsorbed layers; desorption; elemental semiconductors; europium compounds; metallic thin films; silicon; thermal stability; ytterbium compounds; 3D growth; EuSi; Si; Si(111) surface; Stranski-Krastanov mode; YbSi; adsorbed layer; decomposition energy; desorption activation energy; domain structure; silicide film; substrate temperature; thermal stability; Atomic layer deposition; Bonding; Crystallization; Electrons; Kinetic theory; Microelectronics; Silicides; Spectroscopy; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601818

Filename

601818