New type of MZOS FET convolver

Two novel MOSFET convolver structures based on the nonlinear dependence of FET drain current on gate bias in the saturation region, are described. It is shown that a modification of conventional MOSFET convolvers and a new mixing mechanism lead to better performance of known convolver structures. Although the experimental results show good agreement with theoretical estimates, there is a wide field of improvements of the device parameters. With a better controlled deposition process of the ZnO film and a smoother interface for the ZnO by means of a planarization process, the piezoelectric performance and the conversion efficiency of the convolvers will be better and higher. The reduction of the channel length of the MOS transistors leads to a higher transconductance for the FETs, and the operating frequency of the devices can also be increased