DocumentCode
3292823
Title
Reliability and failure mechanisms of lateral MOSFETs in synchronous DC-DC buck converter
Author
Yang, Boyi ; Yuan, J.S. ; Shen, Z.
Author_Institution
Univ. of Central Florida Orlando, Orlando, FL, USA
fYear
2009
fDate
6-10 July 2009
Firstpage
667
Lastpage
671
Abstract
This paper present an evaluation of the reliability of LDMOS transistors in synchronous DC-DC buck converter using physical-based mixed device and circuit simulation. It is observed that impact ionization, lower temperature, and radiation degrade power MOSFET performances and could lead to potential failure if heavy ions strike the converter at critical time during switching.
Keywords
DC-DC power convertors; MOSFET; circuit switching; impact ionisation; semiconductor device reliability; LDMOS transistor; circuit simulation; failure mechanism; impact ionization; lateral MOSFET; physical-based mixed device; radiation degrade power MOSFET performance; reliability; switching; synchronous DC-DC buck converter; Buck converters; Failure analysis; MOSFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232551
Filename
5232551
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