Title :
Reliability and failure mechanisms of lateral MOSFETs in synchronous DC-DC buck converter
Author :
Yang, Boyi ; Yuan, J.S. ; Shen, Z.
Author_Institution :
Univ. of Central Florida Orlando, Orlando, FL, USA
Abstract :
This paper present an evaluation of the reliability of LDMOS transistors in synchronous DC-DC buck converter using physical-based mixed device and circuit simulation. It is observed that impact ionization, lower temperature, and radiation degrade power MOSFET performances and could lead to potential failure if heavy ions strike the converter at critical time during switching.
Keywords :
DC-DC power convertors; MOSFET; circuit switching; impact ionisation; semiconductor device reliability; LDMOS transistor; circuit simulation; failure mechanism; impact ionization; lateral MOSFET; physical-based mixed device; radiation degrade power MOSFET performance; reliability; switching; synchronous DC-DC buck converter; Buck converters; Failure analysis; MOSFETs;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232551
