Title :
Field emission of nitrogen doped DLC films deposited by PECVD
Author :
Park, Kyu Chang ; Moon, Jong Hyun ; Kim, Jae Gak ; Chung, Suk Jae ; Oh, Myung Hwan ; Jang, Jin
Author_Institution :
Dept. of Phys., Kyung Hee Univ., Seoul, South Korea
Abstract :
The N doping effect on the electrical conductivity and electron emission property for diamond like carbon (DLC) films deposited by PECVD has been studied. The electrical conductivity can be widely varied by n-type doping of the DLC. The relationship between the prefactor of conductivity and the conductivity activation energy satisfy the Meyer-Neldel relation: σ0=σ00exp(AE a) with A=19 eV-1 and σ00=9×10-8 S/cm. The emission currents for heavily N doped DLC films are much higher than undoped DLC even though lightly N doped films show much smaller currents
Keywords :
carbon; electrical conductivity; electron field emission; elemental semiconductors; nitrogen; plasma CVD coatings; semiconductor doping; semiconductor thin films; vacuum microelectronics; C:N; Meyer-Neldel relation; N doped DLC films; N doping effect; PECVD; conductivity activation energy; conductivity prefactor; diamond like carbon films; electrical conductivity; electron emission property; field emission; n-type doping; Area measurement; Carbon dioxide; Chemical vapor deposition; Conductive films; Diamond-like carbon; Doping; Electron emission; Nitrogen; Temperature dependence; Thermal conductivity;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601821
