• DocumentCode
    3292845
  • Title

    Reliability challenges for advanced copper interconnects: Electromigration and time-dependent dielectric breakdown (TDDB)

  • Author

    Gambino, Jeffrey P. ; Lee, Tom C. ; Chen, Fen ; Sullivan, Timothy D.

  • Author_Institution
    IBM Microelectron., Essex Junction, VT, USA
  • fYear
    2009
  • fDate
    6-10 July 2009
  • Firstpage
    677
  • Lastpage
    684
  • Abstract
    Ensuring the reliability of Cu interconnects becomes more challenging as device dimensions shrink, because of the smaller dimensions and because of the weaker mechanical properties of the low-k material. In this report, we will focus on electromigration and time dependent dielectric breakdown (TDDB) in Cu interconnect structures.
  • Keywords
    copper; electric breakdown; electromigration; integrated circuit interconnections; integrated circuit reliability; Cu; advanced copper interconnects; electromigration; low-k material; microelectronics reliability; time-dependent dielectric breakdown; Atomic layer deposition; Copper; Dielectric breakdown; Electromigration; Integrated circuit interconnections; Kinetic theory; Materials reliability; Stress; Testing; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
  • Conference_Location
    Suzhou, Jiangsu
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-3911-9
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2009.5232553
  • Filename
    5232553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3292845