DocumentCode :
3292846
Title :
Relationship between field emission characteristics and hydrogen content in DLC deposited by layer-by-layer technique using PECVD
Author :
Park, Kyu Chang ; Moon, Jong Hyun ; Chung, Suk Jae ; Oh, Myung Hwan ; Milne, W.I. ; Jang, Jin
Author_Institution :
Dept. of Phys., Kyung Hee Univ., Seoul, South Korea
fYear :
1996
fDate :
7-12 Jul 1996
Firstpage :
268
Lastpage :
272
Abstract :
We deposited diamond-like-carbon (DLC) films of various hydrogen content by plasma enhanced chemical vapor deposition. The hydrogen content in the DLC film was controlled by a novel technique called a layer-by-layer deposition, in which the deposition of a thin layer of DLC and a CF4 plasma exposure on its surface were carried out alternatively. The DLC films with different hydrogen content could be obtained by varying the CF4 plasma exposure time. The emission current increases and turn-on field decreases with decreasing hydrogen content in the DLC film
Keywords :
carbon; electron field emission; hydrogen; plasma CVD; plasma CVD coatings; thin films; vacuum microelectronics; C:H; CF4 plasma exposure time; DLC films; H content; PECVD; chemical vapor deposition; diamond-like carbon films; emission current; field emission characteristics; layer-by-layer deposition; plasma enhanced CVD; turn-on field; Area measurement; Chemical vapor deposition; Electromagnetic wave absorption; Electron emission; Helium; Hydrogen; Plasma chemistry; Substrates; Vacuum arcs; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
Type :
conf
DOI :
10.1109/IVMC.1996.601822
Filename :
601822
Link To Document :
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