DocumentCode
3292846
Title
Relationship between field emission characteristics and hydrogen content in DLC deposited by layer-by-layer technique using PECVD
Author
Park, Kyu Chang ; Moon, Jong Hyun ; Chung, Suk Jae ; Oh, Myung Hwan ; Milne, W.I. ; Jang, Jin
Author_Institution
Dept. of Phys., Kyung Hee Univ., Seoul, South Korea
fYear
1996
fDate
7-12 Jul 1996
Firstpage
268
Lastpage
272
Abstract
We deposited diamond-like-carbon (DLC) films of various hydrogen content by plasma enhanced chemical vapor deposition. The hydrogen content in the DLC film was controlled by a novel technique called a layer-by-layer deposition, in which the deposition of a thin layer of DLC and a CF4 plasma exposure on its surface were carried out alternatively. The DLC films with different hydrogen content could be obtained by varying the CF4 plasma exposure time. The emission current increases and turn-on field decreases with decreasing hydrogen content in the DLC film
Keywords
carbon; electron field emission; hydrogen; plasma CVD; plasma CVD coatings; thin films; vacuum microelectronics; C:H; CF4 plasma exposure time; DLC films; H content; PECVD; chemical vapor deposition; diamond-like carbon films; emission current; field emission characteristics; layer-by-layer deposition; plasma enhanced CVD; turn-on field; Area measurement; Chemical vapor deposition; Electromagnetic wave absorption; Electron emission; Helium; Hydrogen; Plasma chemistry; Substrates; Vacuum arcs; Vacuum technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location
St. Petersburg
Print_ISBN
0-7803-3594-5
Type
conf
DOI
10.1109/IVMC.1996.601822
Filename
601822
Link To Document