• DocumentCode
    3292846
  • Title

    Relationship between field emission characteristics and hydrogen content in DLC deposited by layer-by-layer technique using PECVD

  • Author

    Park, Kyu Chang ; Moon, Jong Hyun ; Chung, Suk Jae ; Oh, Myung Hwan ; Milne, W.I. ; Jang, Jin

  • Author_Institution
    Dept. of Phys., Kyung Hee Univ., Seoul, South Korea
  • fYear
    1996
  • fDate
    7-12 Jul 1996
  • Firstpage
    268
  • Lastpage
    272
  • Abstract
    We deposited diamond-like-carbon (DLC) films of various hydrogen content by plasma enhanced chemical vapor deposition. The hydrogen content in the DLC film was controlled by a novel technique called a layer-by-layer deposition, in which the deposition of a thin layer of DLC and a CF4 plasma exposure on its surface were carried out alternatively. The DLC films with different hydrogen content could be obtained by varying the CF4 plasma exposure time. The emission current increases and turn-on field decreases with decreasing hydrogen content in the DLC film
  • Keywords
    carbon; electron field emission; hydrogen; plasma CVD; plasma CVD coatings; thin films; vacuum microelectronics; C:H; CF4 plasma exposure time; DLC films; H content; PECVD; chemical vapor deposition; diamond-like carbon films; emission current; field emission characteristics; layer-by-layer deposition; plasma enhanced CVD; turn-on field; Area measurement; Chemical vapor deposition; Electromagnetic wave absorption; Electron emission; Helium; Hydrogen; Plasma chemistry; Substrates; Vacuum arcs; Vacuum technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    0-7803-3594-5
  • Type

    conf

  • DOI
    10.1109/IVMC.1996.601822
  • Filename
    601822