Chip package interaction (CPI) reliability of Cu/low-k/ultra-low-k interconnect

Author

Fu, Lei ; Su, Michael ; Kuechenmeister, Frank ; Huang, Weidong

Author_Institution

Adv. Micro Devices, Inc., Austin, TX, USA

fYear

2009

fDate

6-10 July 2009

Firstpage

691

Lastpage

693

Abstract

The introduction of low-k/ultra-low-k (ULK) dielectric materials to accommodate the continuous scaling down of the feature sizes of IC chips to improve the device density and performance of the ultra-large scale integrated (ULSI) circuits represents great silicon and packaging integration challenges due to the weak mechanical properties. To improve CPI reliability of Cu/low-k or ULK devices, a new crackstop design has been introduced. Underfill materials selection, ULK layer effect, interfacial strength improvement of low-k/ULK films, and lead-free impact on chip-package interaction (CPI) reliability are also discussed.

Keywords

ULSI; dielectric materials; integrated circuit packaging; reliability; IC chips; ULK dielectric materials; ULSI; chip package interaction; reliability; ultra-large scale integrated circuits; Chip scale packaging; Dielectric materials; Environmentally friendly manufacturing techniques; Integrated circuit interconnections; Integrated circuit packaging; Integrated circuit reliability; Materials reliability; Mechanical factors; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232555

Filename

5232555