DocumentCode :
3292886
Title :
Emission characterization of diamond coated Si FEAs
Author :
Zhirnov, V.V. ; Givargizov, E.I. ; Kandidov, A.V. ; Seleznev, B.V. ; Alimova, A.N.
Author_Institution :
Inst. of Crystallogr., Acad. of Sci., Moscow, Russia
fYear :
1996
fDate :
7-12 Jul 1996
Firstpage :
278
Lastpage :
282
Abstract :
Large-area arrays of Si tips (103-106 tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes
Keywords :
diamond; electron field emission; elemental semiconductors; silicon; vacuum microelectronics; 80 mA; C-Si; DC mode; Si tips; diamond coated Si FEA; emission characterization; field emitter arrays; large-area arrays; low emission threshold; pulse mode; uniform emission characteristics; Cathodes; Coatings; Diodes; Field emitter arrays; Microelectronics; Phosphors; Pulse measurements; Silicon; Substrates; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
Type :
conf
DOI :
10.1109/IVMC.1996.601824
Filename :
601824
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3292886
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