Title :
The effect of microstructure on electromigration induced voids
Author :
Ceric, H. ; de Orio, R.L. ; Cervenka, J. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ.Wien, Vienna, Austria
Abstract :
We present the application of a state of the art electromigration model on a dual damascene interconnect with typical copper microstructure. The influence of the microstructure on the formation and development of an electromigration induced void is studied by simulation and the results are compared with experiments. A close investigation has shown that the network of grain boundaries has a decisive impact on the formation of void nucleation sites and void development.
Keywords :
copper; electromigration; integrated circuit interconnections; integrated circuit reliability; dual damascene interconnect; electromigration induced voids; grain boundaries; microstructure; void development; void nucleation sites; Circuit simulation; Computer network reliability; Copper; Electromigration; Grain boundaries; Integrated circuit interconnections; Microelectronics; Microstructure; Surface morphology; Tensile stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232556
