DocumentCode
3292909
Title
The effect of microstructure on electromigration induced voids
Author
Ceric, H. ; de Orio, R.L. ; Cervenka, J. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Tech. Univ.Wien, Vienna, Austria
fYear
2009
fDate
6-10 July 2009
Firstpage
694
Lastpage
697
Abstract
We present the application of a state of the art electromigration model on a dual damascene interconnect with typical copper microstructure. The influence of the microstructure on the formation and development of an electromigration induced void is studied by simulation and the results are compared with experiments. A close investigation has shown that the network of grain boundaries has a decisive impact on the formation of void nucleation sites and void development.
Keywords
copper; electromigration; integrated circuit interconnections; integrated circuit reliability; dual damascene interconnect; electromigration induced voids; grain boundaries; microstructure; void development; void nucleation sites; Circuit simulation; Computer network reliability; Copper; Electromigration; Grain boundaries; Integrated circuit interconnections; Microelectronics; Microstructure; Surface morphology; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232556
Filename
5232556
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