DocumentCode
3292944
Title
Fabrication of FED prototype based on Si FEAs with diamond coating
Author
Givargizov, E.I. ; Zhirnov, V.V. ; Chubun, N.N. ; Stepanova, A.N.
Author_Institution
Inst. of Crystallogr., Acad. of Sci., Moscow, Russia
fYear
1996
fDate
7-12 Jul 1996
Firstpage
303
Lastpage
307
Abstract
A new concept of field emission display (FED) based on ungated silicon field emission arrays with diamond coating is proposed. FED prototypes have been fabricated and tested in DC and pulse modes. Sufficiently bright light emission was observed at the anode-to-cathode voltage from 200 to 300 Volts
Keywords
diamond; electron field emission; elemental semiconductors; flat panel displays; silicon; vacuum microelectronics; 200 to 300 V; C-Si; DC mode; FED prototype; Si FEAs; diamond coating; fabrication; field emission display; pulse mode; ungated Si field emission arrays; Anodes; Cathodes; Coatings; Diodes; Fabrication; P-n junctions; Phosphors; Prototypes; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location
St. Petersburg
Print_ISBN
0-7803-3594-5
Type
conf
DOI
10.1109/IVMC.1996.601829
Filename
601829
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