Title :
Sample variability and time stability in scaled silicon nanowires
Author :
Pierre, M. ; Jehl, X. ; Wacquez, R. ; Vinet, M. ; Sanquer, M. ; Belli, M. ; Prati, E. ; Fanciulli, M. ; Verduijn, J. ; Tettamanzi, G.C. ; Lansbergen, G.P. ; Rogge, S. ; Ruoff, M. ; Fleischer, M. ; Wharam, D. ; Kern, D.
Author_Institution :
CEA-DSM-INAC, CEA-Grenoble, Grenoble
Abstract :
We explain variability observed for the resonant tunnelling transport through donors in scaled silicon nanowires by the influence of charge configuration changes at the edges between the channel and the source-drain regions. This charge configuration is remarkably robust with respect to ageing effects, thermal cycling and the associated Id-Vg characteristics at low temperature constitute a real ldquoelectro-fingerprintrdquo for the samples. This stability is prerequisite for applications based on the gate control of single donor orbitals in nanoscale CMOS devices.
Keywords :
CMOS integrated circuits; elemental semiconductors; nanowires; resonant tunnelling; silicon; stability; Si; gate control; low temperature; nanoscale CMOS devices; real electro-fingerprint; resonant tunnelling transport; sample variability; scaled silicon nanowires; single donor orbitals; source-drain regions; time stability; Aging; Doping; Nanowires; Resonance; Resonant tunneling devices; Robustness; Silicon; Stability; Temperature dependence; Threshold voltage;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897583
