DocumentCode :
32930
Title :
Low-Power CMOS Smart Temperature Sensor With a Batch-Calibrated Inaccuracy of 
From  incremental ΔΣ A/D converter. After batch calibration, an inaccuracy of ±0.25°C (±3) from -70°C to 130°C is obtained. This represents a two-fold improvement compared to the state-of-the-art. After individual calibration at room temperature, an inaccuracy better than ±0.1°C over the military temperature range is obtained, which is in-line with the state-of-the-art. This performance is achieved at a power consumption of 65 μW during a measurement time of 100 ms, by optimizing the power/inaccuracy tradeoffs, and by employing a clock frequency proportional to absolute temperature. The latter ensures accurate settling of the SC input stage at low temperatures, and reduces the effects of leakage currents at high temperatures.</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>CMOS integrated circuits; calibration; intelligent sensors; low-power electronics; temperature sensors; batch calibration; batch-calibrated inaccuracy; leakage currents; low-power CMOS smart temperature sensor; precision switched-capacitor incremental ΔΣ A/D converter; substrate PNP transistors; temperature -70 degC to 130 degC; temperature 293 K to 298 K; temperature information; Calibration; Capacitors; Modulation; Temperature measurement; Temperature sensors; Transistors; <formula formulatype=)
$DeltaSigma$ A/D conversion; batch calibration; smart temperature sensors; substrate PNP transistors;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2013.2244033
Filename :
6423195
Link To Document :
