DocumentCode
3293020
Title
Design considerations for undoped FinFETs based on a 3D compact model for the potential barrier
Author
Kloes, Alexander ; Weidemann, Michaela ; Schwarz, Mike ; Holtij, Thomas
Author_Institution
Univ. of Appl. Sci., Giessen
fYear
2009
fDate
18-20 March 2009
Firstpage
265
Lastpage
268
Abstract
From an analytical model for the potential barrier in undoped FinFETs geometry constraints for the DIBL effect are derived. Furthermore, the influence of corner effects on the transconductance of the drain current are investigated. These effects are analyzed by numerical results and by definition of a simple current equation which is based on the analytical model.
Keywords
MOSFET; 3D compact model; DIBL effect; corner effects; current equation; drain current; potential barrier; transconductance; undoped FinFETs; Analytical models; Electrostatic analysis; Equations; FETs; FinFETs; Geometry; Leakage current; Solid modeling; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location
Aachen
Print_ISBN
978-1-4244-3704-7
Type
conf
DOI
10.1109/ULIS.2009.4897587
Filename
4897587
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