Voltage Contrast Enhancement for Gate Leak Failure Detected by Electron Beam Inspection

Author

Fujiyoshi, Katsuhiro ; Sawai, Koetsu ; Inoue, Kazutaka ; Saiki, Keiichi ; Sakurai, Koichi

Author_Institution

Renesas Technol. Corp., Hitachinaka

fYear

2006

fDate

25-27 Sept. 2006

Firstpage

11

Lastpage

14

Abstract

We studied the VC (voltage contrast) enhancement technique of the FA (failure analysis) tool. We found a gate leak VC dependency on the relative angle between the beam scan direction and gate electrode direction. A simplified RC model can explain this phenomenon qualitatively. With the help of this VC enhancement technique of the FA tool, we could tune the EBI recipe in appropriate sensitivity. As a result, correct EBI evaluation results of countermeasure experiments led us to a solution within a shorter period of time.

Keywords

electron beams; fault diagnosis; inspection; beam scan direction; electron beam inspection; failure analysis; gate electrode direction; gate leak failure detection; voltage contrast enhancement; Electric breakdown; Electrodes; Electron beams; Epitaxial growth; Failure analysis; Inspection; Leak detection; Random access memory; Virtual colonoscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on

Conference_Location

Tokyo

ISSN

1523-553X

Print_ISBN

978-4-9904138-0-4

Type

conf

DOI

10.1109/ISSM.2006.4493009

Filename

4493009