Title :
Ultrasonic time-of-flight method for on-line quantitation of semiconductor gases
Author :
Cadet, Curdy ; Valdes, J.L. ; Mitchell, J.W.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
An ultrasonic method is described for online determination of on-demand generated arsine in process streams. For online monitoring of dangerously toxic gases, the ultrasonic method has proven to be superior to other techniques. Accurate, noninvasive, real-time determinations of arsine in hydrogen have been accomplished. Highly precise experimental calibrations are in excellent agreement with theoretical predictions based on an appropriate acoustic model. The acoustic time-of-flight method was also found to be insensitive to pressure and volumetric gas flows. For these reasons, it is a versatile and practical tool for monitoring a broad range of binary gas flow streams of reagents used for device fabrication
Keywords :
arsenic compounds; gas sensors; semiconductor technology; time of flight spectra; ultrasonic applications; AsH3; acoustic time-of-flight method; arsine; semiconductor gases; toxic gas monitoring; ultrasonic method; Chemical vapor deposition; Gases; Hydrogen; Inductors; Molecular beam epitaxial growth; Monitoring; Semiconductor materials; Ultrasonic variables measurement; Velocity measurement; Weight control;
Conference_Titel :
Ultrasonics Symposium, 1991. Proceedings., IEEE 1991
Conference_Location :
Orlando, FL
DOI :
10.1109/ULTSYM.1991.234173