Title :
A wide locking range Q-band injection-locked frequency divider
Author :
Wen-Feng Liang ; Wei Hong ; Ji-Xin Chen
Author_Institution :
Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
A Q-band divide-by-2 injection-locked frequency divider (ILFD) is presented in this paper. A common-centroid cross-coupled transistor pair structure is adopted to reduce the gate-drain capacitance for widening the locking range. The whole layout of the ILFD is simulated using a 3D electromagnetic (EM) simulator for a one-pass success, and a good match between the simulation and measurement results is achieved without using any tuning varactors. At an input power of 0 dBm, the ILFD achieves the input locking range of 34-50 GHz. The power consumption of the ILFD core is 7.7 mW at a 0.7 V supply voltage.
Keywords :
CMOS integrated circuits; capacitance; energy consumption; field effect MMIC; frequency dividers; varactors; 3D electromagnetic simulator; EM simulator; ILFD; common-centroid cross-coupled transistor pair structure; frequency 34 GHz to 50 GHz; gate-drain capacitance; injection-locked frequency divider; power 7.7 mW; power consumption; tuning varactor; wide locking range Q-band; CMOS integrated circuits; CMOS technology; Capacitance; Frequency conversion; Layout; Oscillators; Transistors; CMOS; Q-band; frequency divider; injection-locked;
Conference_Titel :
Wireless Symposium (IWS), 2013 IEEE International
Conference_Location :
Beijing
DOI :
10.1109/IEEE-IWS.2013.6616809
