Title :
Modeling of radiation-induced displacement damage in silicon solar cells: Frenkel defect
Author :
Maiti, T.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol. Kharagpur, Kharagpur, India
Abstract :
Displacement damage mechanisms due to radiation have been investigated and interpreted via abinitio calculation. Effect of radiation-induced Frenkel defect has been incorporated in device modeling. Current voltage characteristics are studied to establish beginning of life (BOL) parameters of the solar cells and the changes that occur due to irradiation (EOL).
Keywords :
Frenkel defects; solar cells; Frenkel defect; ab initio calculation; beginning of life parameters; current voltage characteristics; device modeling; radiation-induced displacement damage; silicon solar cells; Atomic measurements; Current-voltage characteristics; Degradation; Entropy; Lattices; Neural networks; Particle scattering; Photovoltaic cells; Silicon; Temperature;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232562
