DocumentCode :
3293082
Title :
Effect of diamond growth parameters on field emission current
Author :
Hong, D. ; Aslam, Dean M.
Author_Institution :
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fYear :
1996
fDate :
7-12 Jul 1996
Firstpage :
325
Lastpage :
328
Abstract :
The field emission characteristics of diamond films grown by hot filament chemical vapor deposition (HFCVD) with different deposition parameters are studied. Electric fields to initiate emission, measured at J=0.01 mAcm-2, are in the range of 0.1~0.4 MV/cm depending upon growth conditions. Diamond films with low diamond/graphite peak (sp 3/sp2 ratio), wider diamond peak at 1332 cm-1 and low resistivity show emission at low fields
Keywords :
chemical vapour deposition; diamond; electron field emission; elemental semiconductors; semiconductor growth; semiconductor thin films; vacuum microelectronics; C; chemical vapor deposition; diamond growth parameters; field emission characteristics; field emission current; hot filament CVD; low field emission; Anodes; Conductive films; Conductivity; Current density; Doping; Grain size; Low voltage; Powders; Semiconductor films; Solids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
Type :
conf
DOI :
10.1109/IVMC.1996.601834
Filename :
601834
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3293082
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