Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii

Author

Ku, T.K. ; Chen, S.H. ; Yang, C.D. ; She, N.J. ; Tarntair, F.G. ; Wang, C.C. ; Chen, C.F. ; Hsieh, I.J. ; Cheng, H.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1996

fDate

7-12 Jul 1996

Firstpage

329

Lastpage

333

Abstract

In order to take advantage of diamond and carbon coatings on flat-panel displays, unscratched sharp Si microtip arrays have been carburized based on the bias enhanced nucleation (BEN) and low-pressure MPCVD deposition to obtain an ultra-sharp carburized Si FEAs. The tip radii of these BEN-carburized Si tips can be reduced below 300 Å under low deposition temperature (<550°C). Furthermore, some BEN-carburized samples were further deposited by normal diamond growth conditions to form the ultra-sharp DLC-clad Si FEAs with enhanced emission ability

Keywords

carbon; electron field emission; flat panel displays; nucleation; plasma CVD; plasma CVD coatings; silicon; vacuum microelectronics; 300 A; 550 C; C-Si; DLC-clad Si; Si microtip arrays; bias enhanced nucleation; carbon-clad Si microtips; characterization; diamond-like C; enhanced emission ability; fabrication; flat-panel display; low-pressure MPCVD deposition; microwave plasma CVD; ultra-sharp carburized Si FEAs; ultra-small tip radii; Coatings; Conducting materials; Diamond-like carbon; Displays; Fabrication; Plasma applications; Plasma temperature; Silicon; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601835

Filename

601835