Title :
High-k dielectrics´ radiation response to X-ray and γ-ray exposure
Author :
Zhao, C.Z. ; Werner, M. ; Taylor, S. ; Chalker, P.R. ; Potter, R.J. ; Gaskell, J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Xi´´an Jiaotong - Liverpool Univ., Suzhou, China
Abstract :
Radiation-induced degradation of HfO2, ZrO2, LaAlO3, and NdAlO3 thin films was studied and compared based on a Fe55 X-ray source and Cs137 gamma-ray source. After the X-ray exposure of a total dose of 100 krad, negative VFB shifts were observed in these thin films, whereas after the gamma-ray exposures of the same dose, positive VFB shifts was observed.
Keywords :
X-ray effects; caesium; gamma-ray effects; hafnium compounds; high-k dielectric thin films; iron; lanthanum compounds; neodymium compounds; radiation hardening; zirconium compounds; HfO2; LaAlO3; NdAlO3; X-ray exposure; ZrO2; gamma-ray exposure; high-k dielectrics; negative VFB shifts; radiation response; thin films; Channel bank filters; Degradation; Dielectric measurements; Dielectric thin films; High K dielectric materials; High-K gate dielectrics; Inductors; MOCVD; Space technology; Transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232565
