High-k dielectrics´ radiation response to X-ray and γ-ray exposure

Author

Zhao, C.Z. ; Werner, M. ; Taylor, S. ; Chalker, P.R. ; Potter, R.J. ; Gaskell, J.

Author_Institution

Dept. of Electr. & Electron. Eng., Xi´´an Jiaotong - Liverpool Univ., Suzhou, China

fYear

2009

fDate

6-10 July 2009

Firstpage

628

Lastpage

630

Abstract

Radiation-induced degradation of HfO₂, ZrO₂, LaAlO₃, and NdAlO₃ thin films was studied and compared based on a Fe⁵⁵ X-ray source and Cs¹³⁷ gamma-ray source. After the X-ray exposure of a total dose of 100 krad, negative VFB shifts were observed in these thin films, whereas after the gamma-ray exposures of the same dose, positive VFB shifts was observed.

Keywords

X-ray effects; caesium; gamma-ray effects; hafnium compounds; high-k dielectric thin films; iron; lanthanum compounds; neodymium compounds; radiation hardening; zirconium compounds; HfO₂; LaAlO₃; NdAlO₃; X-ray exposure; ZrO₂; gamma-ray exposure; high-k dielectrics; negative VFB shifts; radiation response; thin films; Channel bank filters; Degradation; Dielectric measurements; Dielectric thin films; High K dielectric materials; High-K gate dielectrics; Inductors; MOCVD; Space technology; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232565

Filename

5232565