DocumentCode
3293117
Title
Applications of scanning near-field photon emission microscopy
Author
Isakov, Dv ; Tan, Bwm ; Phang, JCH ; Yeo, Yc ; Tio, Aab ; Zhang, Y. ; Geinzer, T. ; Balk, L.J.
Author_Institution
Centre for Integrated Circuit Failure Anal. & Reliability (CICFAR), Nat. Univ. of Singapore, Singapore, Singapore
fYear
2009
fDate
6-10 July 2009
Firstpage
631
Lastpage
634
Abstract
In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are discussed.
Keywords
MOSFET; integrated circuit testing; near-field scanning optical microscopy; semiconductor device metallisation; Fin-FET test structure; metallization layer; photon emission site imaging; scanning near-field photon emission microscopy; scattering dialectic probe; Apertures; Light scattering; Microscopy; Optical attenuators; Optical scattering; Particle scattering; Photonic integrated circuits; Probes; Silicon devices; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232566
Filename
5232566
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