Title :
Applications of scanning near-field photon emission microscopy
Author :
Isakov, Dv ; Tan, Bwm ; Phang, JCH ; Yeo, Yc ; Tio, Aab ; Zhang, Y. ; Geinzer, T. ; Balk, L.J.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability (CICFAR), Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are discussed.
Keywords :
MOSFET; integrated circuit testing; near-field scanning optical microscopy; semiconductor device metallisation; Fin-FET test structure; metallization layer; photon emission site imaging; scanning near-field photon emission microscopy; scattering dialectic probe; Apertures; Light scattering; Microscopy; Optical attenuators; Optical scattering; Particle scattering; Photonic integrated circuits; Probes; Silicon devices; Spatial resolution;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232566
